• "AlGan-GaN current aperture vertical electron transistors with regrown channels" I. Ben-Yaacov, Y.-K. Seck, U. K. Mishra, S. P. DenBaars. Journal of Applied Physics, 95, pp. 2073-2078, (2004).
• "Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells" M. D. Craven, P. Waltereit, J. S. Speck, S. P. DenBaars. Applied Physics Letters, 84, pp. 496-498, (2004).
• "Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition" A. Armstrong, A. R. Arehart, B. Moran, S. P. DenBaars, U. K. Mishra, J. S. Speck, S. A. Ringel. Applied Physics Letters, 84, pp. 374-376, (2004).
• "AlGaN/GaN polarization-doped field effect transistor for microwave power applications" S. Rajan, H. Xing, S. DenBaars, U. K. Mishra, D. Jena. Applied Physics Letters, 84, pp. 1591-1593, (2004).
• "Radiative and nonradiative processes in strain-free AlxGa1-x/N films studied by time-resolved photoluminescence and positron annihilation techniques" T. Onuma, S. F. Chichibu, A. Uedona, T. Sota, P. Cantu, T. M. Katona, J. F. Kaeding, S. Keller, U. K. Mishra, S. Nakamura, S. P. DenBaars. Journal of Applied Physics, 95, pp. 2495-2504, (2004).
• "Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition" M. D. Craven, F. Wu, A. Chakraborty, B. Imer, U. K. Mishra, S. P. DenBaars, J. S. Speck. Applied Physics Letters, 84, pp. 1281-1283, (2004).
• "Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening" T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, S. Nakamura. Applied Physics Letters, 84, pp. 855-857, (2004).
• "GaN quantum dot density control by rf-plasma molecular beam epitaxy" J. Brown, F. Wu, P. M. Petroff, J. S. Speck. Applied Physics Letters, 84, pp. 690-692, (2004).
• "Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy" E. J. Miller, E. T. Yu, P. Waltereit, J. S. Speck. Applied Physics Letters, 84, pp. 535-537, (2004).
• "Diffusivity of native defects in GaN" S. Limpijumnong, C.G. Van de Walle. Physical Review B-Condensed Matter, 69, pp.35207-1-35207-11. (2004).
• "First-principles calculations for defects and impurities: applications to III-nitrides" C.G. Van de Walle, J. Neugebauer J. Journal of Applied Physics, 95, pp.3851-3879. (2004).
• "Indium versus hydrogen-terminated GaN(0001) surfaces: surfactant effect of indium in a chemical vapor deposition environment" J.E. Northrup, C.G. Van de Walle. Applied Physics Letters, 84, pp.4322-4324. (2004).
• "Effects of N on the electronic structures of H defects in III-V semiconductors" A. Janotti, S.B. Zhang, Su-Huai Wei, C.G. Van de Walle. Optical Materials, 25, pp.261-269. (2004).
• "Physics of defects and hydrogen in dilute nitrides" S.B. Zhang, A. Janotti, S-H Wei, C.G. Van de Walle. IEE Proceedings Optoelectronics,151, pp.369-377. (2004).
• "InP photonic crystal membrane structures: fabrication accuracy and optical performance" X. Aimin, M. Darvanco, D.J. Blumenthal, E.L. Hu EL. Applied Physics Letters, 85, pp.522-524. (2004).
• "Effect of nitridation on polarity, microstructure, and morphology of AlN films" Y. Wu, A. Hanlon, J.F. Kaeding, R. Sharma, P.T. Fini, S. Nakamura, J.S. Speck. Applied Physics Letters, 84, pp.912-914.(2004).
• "12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate" A. Chini, D. Buttari, R. Coffie, S. Heikman, S. Keller, U.K. Mishra. Electronics Letters, 40, pp.73-74. (2004).
• "Improved surface morphology in GaN homoepitaxy by NH/sub 3/-source molecular-beam epitaxy" T. Koida , Y. Uchinuma, J. Kikuchi, K.R. Wang, M. Terazaki ,T. Onuma, J.F. Keading , R. Sharma, S. Nakamura, S.F. Chichibu.Journal of Vacuum Science & Technology B Microelectronics & Nanometer Structures Processing Measurement & Phenomena, 22, pp.2158-2164. (2004).
• "Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs" A. Chini, D. Buttari, R. Coffie, L. Shen, S. Heikman, A. Chakraborty, S. Keller, U.K. Mishra. IEEE Electron Device Letters, 25, pp.2292-31. (2004).
• "High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates" Huili Xing, Y. Dora, A. Chini, S. Heikman, S. Keller, U.K. Mishra. IEEE Electron Device Letters, 25, pp.161-163. (2004).
• "The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors" Xinwen Hu, B.K. Choi, H.J. Barnaby, D.M. Fleetwood, R.D. Schrimpf, Sungchul Lee, S. Shojah-Ardalan, R. Wilkins R, U.K. Mishra, R.W. Dettmer. IEEE Transactions on Nuclear Science, 51, pp.293-297. (2004).
• "30-W/mm GaN HEMTs by field plate optimization" Y-F Wu, A. Saxler, M. Moore, R.P. Smith, S. Sheppard, P.M. Chavarkar, T. Wisleder, U.K. Mishra, P. Parikh. IEEE Electron Device Letters, 25, pp.117-119. (2004).
• "Integration of Ba/sub x/Sr/sub 1-x/TiO/sub 3/ thin films with AlGaN/GaN HEMT circuits" Hongtao Xu, N.K. Perve, P.J. Hansen, L. Shen, S. Keller, U.K. Mishra, R.A. York. IEEE Electron Device Letters, 25, pp.49-51. (2004).
• "Power and linearity characteristics of GaN MISFETs on sapphire substrate" A. Chini, J. Wittich, S. Heikman, S. Keller, S.P. DenBaars, U.K. Mishra. IEEE Electron Device Letters, 25, pp.55-57. (2004).
• "Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped Al/sub x/Ga/sub 1-x/N and thick GaN cap Layers" A.P. Karmarkar, Bongim Jun, D.M. Fleetwood, R.D. Schrimpf, R.A. Weller, B.D. White, L.J. Brillson, U.k. Mishra. IEEE Transactions on Nuclear Science, 51, pp.3801-3806. (2004).
• "Surface-related drain current dispersion effects in AlGaN-GaN HEMTs" G. Meneghesso, G. Verzellesi, R. Pierobon, F. Rampazz, A. Chini, U.K. Mishra, C. Canali, E. Zanoni. IEEE Transactions on Electron Devices, 51, pp.1554-1561. (2004).
• "A C-band high-dynamic range GaN HEMT low-noise amplifier" Hongtao Xu, C. Sanabria, A. Chini, S. Keller, U.K. Mishra, R.A. York. IEEE Microwave & Wireless Components Letters, 14, pp.262-264. (2004).
• "The growth of N-face GaN by MOCVD: effect of Mg, Si, and In" P.R. Tavernier, T. Margalith, J. Williams, D.S. Green, S. Keller, S.P. DenBaars, U.K. Mishra, S. Nakamura, D.R. Clarke. Journal of Crystal Growth, 264, pp.15015-8. (2004).
• "Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes" K-G. Gan, Chi-Kuang Sun, S.P. DenBaars, J.E. Bowers. Applied Physics Letters, 84, pp.4675-4677. (2004).
• "High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation" L. Shen, R. Coffie, D. Buttari, S. Heikman, A. Chakraborty, A. Chini, S. Keller, S.P. DenBaars, U.K. Mishra. IEEE Electron Device Letters, 25, pp.7-9. (2004).
• "Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth" T. Koida, S.F. Chichibu, T. Sota, M.D. Craven, B.A. Haskell, J.S. Speck, S.P. DenBaars, S. Nakamura. Applied Physics Letters, 84, pp.3768-3770. (2004).
• "Dislocation- and crystallographic-dependent photoelectrochemical wet etching of gallium nitride" Y.Gao, M.D. Craven, J.S. Speck, S.P. DenBaars, E.L. Hu. Applied Physics Letters, 84, pp.3322-3324. (2004).
• "Blue GaN-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5%" P. Waltereit, H. Sato, C. Poblenz, D.S. Green, J.S. Brown, M. McLaurin, T. Katona, S.P. DenBaars, J.S. Speck, J-H. Liang, M. Kato, H. Tamura, S. Omori, C. Funaoka. Applied Physics Letters, 84, pp.2748-2750. (2004).
• "Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photo-enhanced chemical wet etching" Y. Gao, T. Fujii, R. Sharma, K. Fujito, S.P. Denbaars, S. Nakamura, E.L. Hu. Japanese Journal of Applied Physics Part 2-Letters, 43, pp.L637-L639. (2004).
• "Cathodoluminescence study of deep ultraviolet quantum wells grown on maskless laterally epitaxial overgrown AlGaN" T.M. Katona, M.D. Craven, J.S. Speck, S.P. DenBaars. Applied Physics Letters, 85, pp.1350-1352. (2004).
• "Carbon doping of GaN with CBr/sub 4/ in radio-frequency plasma-assisted molecular beam epitaxy" D.S. Green, U.K. Mishra, J.S. Speck. Journal of Applied Physics, 95, pp.8456-8462. (2004).
• "MOCVD growth of AlGaN films for solar blind photodetectors" P.C. Alejandro, S. Keller, T. Li, U.K. Mishra, J.S. Speck, S.P. DenBaars. Physica Status Solidi A-Applied Research, 201, pp.2185-9. (2004).
• "Nonpolar a-plane p-type GaN and p-n junction diodes" A. Chakraborty, H. Xing, M.D. Craven, S. Keller, T. Mates, J.S. Speck, S.P. DenBaars, U.k. Mishra. Journal of Applied Physics, 96, pp.4494-4499. (2004).
• "Analysis of interface electronic structure in In/sub x/Ga/sub 1-x/N/GaN heterostructures" H. Zhang, E.J. Miller, E.T. Yu, C. Poblenz, J.S. Speck. Journal of Vacuum Science & Technology B Microelectronics & Nanometer Structures Processing Measurement & Phenomena, 22, pp.2169-2174. (2004).
• "Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors" C. Poblenz, P. Waltereit, S. Rajan, S. Heikman, U.K. Mishra, J.S. Speck. Journal of Vacuum Science & Technology B Microelectronics & Nanometer Structures Processing Measurement & Phenomena, 22, pp.1145-1149. (2004).
• "Gallium adsorption onto (1120) gallium nitride surfaces" M. McLaurin, B. Haskell, S. Nakamura, J.S. Speck. Journal of Applied Physics, 96, pp.327-334 (2004).
• "Maskless lateral epitaxial overgrowth of high-aluminum-content Al/sub x/Ga/sub 1-x/N" T.M. Katona, P. Cantu, S. Keller, Y. Wu, J.S. Speck, S.P. DenBaars. Applied Physics Letters, 84, pp.5025-5027. (2004).
• "Measurement of polarization charge and conduction-band offset at In/sub x/Ga/sub 1-x/N/GaN heterojunction interfaces" H. Zhang, E.J. Miller, E.T. Yu, C. Poblenz, J.S. Speck. Applied Physics Letters, 84, pp.4644-4646. (2004).
• "Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE" S Rajan, P. Waltereit, C. Poblenz, S.J. Heikman, D.S. Green, J.S. Speck, U.K. Mishra. IEEE Electron Device Letters, 25, pp.247-249. (2004).

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